Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2018
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5050773